Ceramic-Packaged Broadband GaN Power Transistor
Part Number
Frequency
(GHz)
Condition
Voltage
(V)
Test freq
(GHz)
P3dB
(W/dBm)
Drain
Efficiency(%)
Gain
(dB)
Package
Note：Available in flange-mounted or flange-free packages；
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The main products include gallium nitride RF chips and devices for communication base stations, as well as microwave point-to-point communication RF chips and devices.
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