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GaAs Multi-Function MMIC

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Frequency(GHz)

Specifications

Package/DIM(mm)

Conversion Gain：9.5dB～17dB；IP1dB≥-10dBm；NF：2dB

Conversion Gain：17dB～25dB；OP1dB≥23dBm；OIP3：35 dBm

Conversion Gain：10.5dB～16.5dB；IP1dB≥-10.5dBm；NF：≤2.8dB

Conversion Gain：15dB～26.5dB；OP1dB≥22.5dBm；OIP3：33 dBm

Conversion Gain：9dB～16dB；IP1dB≥-11dBm；NF：2dB

31.79-33.408-UC

Conversion Gain：5dB～11.5dB；OP1dB≥13dBm；OIP3：22 dBm

31.79-33.408-DC

Conversion Gain：11dB～19.5dB；IP1dB≥-9dBm；IIP3：3dBm

Conversion Gain：18dB～31dB；P1dB≥20dBm；ATT:55dB

Conversion Gain：9.5dB～19dB；IP1dB≥-9dBm

Conversion Gain：4dB～11dB；OP1dB≥12dBm

4-12-MIXER（include LOamplifer）

Conversion Loss：7.5dB；IP3:20dBm

Gain：16.5dB；OP1dB：29.5dBm；ATT:30dB

Gain：21.5dB；OP1dB：30dBm；ATT:37dB

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The main products include gallium nitride RF chips and devices for communication base stations, as well as microwave point-to-point communication RF chips and devices.

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