GaAs LNA-Products-BOWEI - Drives the Future of 5G Communication

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Part Number

Frequency(GHz)

Specifications

Package/DIM(mm)

BW281SM4

5-14

Gain：19dB；NF：2.7dB；OIP3：28 dBm

SM4/4*4

BWAP138LP3

5.9-8.5

Gain：17dB；NF：1.6dB；IIP3：≥10 dBm

LP3/3*3

BWAP139SM3G

10.1-15.4

Gain：18dB；NF：1.5dB；IIP3：≥10 dBm

SM3G/3*3

BWAP142SM3G

17.6-19.8

Gain：14dB；NF：2.3dB；IIP3：≥10 dBm

SM3G/3*3

BWAP143SM3G

21.2-23.7

Gain：14dB；NF：2.3dB；IIP3：≥10 dBm

SM3G/3*3

BWAP144SM45

31.8-33.45

Gain：16.5dB；NF：2.5dB；IIP3：≥8 dBm

SM45/5*4

BWAP145SM45

37-40.15

Gain：16.5dB；NF：2.5dB；IIP3：≥8 dBm

SM45/5*4

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The main products include gallium nitride RF chips and devices for communication base stations, as well as microwave point-to-point communication RF chips and devices.

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